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|Title:||Effect of spacer layer thickness on the magnetic and magnetotransport properties of Fe3 O4 Cu Ni80 Fe20 spin valve structures|
|Authors:||Tripathy, D. |
|Citation:||Tripathy, D., Adeyeye, A.O., Shannigrahi, S. (2007). Effect of spacer layer thickness on the magnetic and magnetotransport properties of Fe3 O4 Cu Ni80 Fe20 spin valve structures. Physical Review B - Condensed Matter and Materials Physics 75 (1) : -. ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevB.75.012403|
|Abstract:||We present a systematic and detailed study of the magnetization reversal process and magnetotransport properties of Fe3 O4 Cu (tCu) Ni80 Fe20 spin valve structures. A drastic change was observed in both the magnetic and transport properties as the thickness of the Cu spacer layer tCu was varied in the range 2 nm≤ tCu ≤30 nm. For tCu =2 nm, the transport properties are mainly due to anisotropic magnetoresistance effects because of strong exchange coupling between the Ni80 Fe20 and Fe3 O4 layers. For tCu ≥5 nm, however, the transport properties are dominated by positive giant magnetoresistance (GMR) effects due to separate magnetization switching of the two magnetic layers. The GMR ratio decreases with increasing spacer layer thickness due to enhanced current shunting and scattering effects. We also observed that the GMR ratio has strong temperature dependence and decreases with increasing temperature due to spin flip scattering and electron-magnon interactions. © 2007 The American Physical Society.|
|Source Title:||Physical Review B - Condensed Matter and Materials Physics|
|Appears in Collections:||Staff Publications|
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