Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1608480
Title: Effect of annealing profile on defect annihilation, crystallinity and size distribution of germanium nanodots in silicon oxide matrix
Authors: Kan, E.W.H.
Choi, W.K. 
Leoy, C.C.
Chim, W.K. 
Antoniadis, D.A.
Fitzgerald, E.A.
Issue Date: 8-Sep-2003
Source: Kan, E.W.H., Choi, W.K., Leoy, C.C., Chim, W.K., Antoniadis, D.A., Fitzgerald, E.A. (2003-09-08). Effect of annealing profile on defect annihilation, crystallinity and size distribution of germanium nanodots in silicon oxide matrix. Applied Physics Letters 83 (10) : 2058-2060. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1608480
Abstract: The improved crystallinity of the germanium nanodots synthesized by the double-step annealing process was investigated. The Raman spectroscopy and transmission electron microscopy diffraction patterns were used for the investigation. A mechanism of growth at different annealing profile was also proposed.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/55741
ISSN: 00036951
DOI: 10.1063/1.1608480
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