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|Title:||Effect of annealing profile on defect annihilation, crystallinity and size distribution of germanium nanodots in silicon oxide matrix|
|Citation:||Kan, E.W.H., Choi, W.K., Leoy, C.C., Chim, W.K., Antoniadis, D.A., Fitzgerald, E.A. (2003-09-08). Effect of annealing profile on defect annihilation, crystallinity and size distribution of germanium nanodots in silicon oxide matrix. Applied Physics Letters 83 (10) : 2058-2060. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1608480|
|Abstract:||The improved crystallinity of the germanium nanodots synthesized by the double-step annealing process was investigated. The Raman spectroscopy and transmission electron microscopy diffraction patterns were used for the investigation. A mechanism of growth at different annealing profile was also proposed.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
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