Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1514391
Title: Direct determination of free exciton binding energy from phonon-assisted luminescence spectra in GaN epilayers
Authors: Xu, S.J.
Liu, W.
Li, M.F. 
Issue Date: 14-Oct-2002
Source: Xu, S.J., Liu, W., Li, M.F. (2002-10-14). Direct determination of free exciton binding energy from phonon-assisted luminescence spectra in GaN epilayers. Applied Physics Letters 81 (16) : 2959-2961. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1514391
Abstract: Investigation of variable-temperature longitudinal optical (LO) phonon-assisted luminescence spectra of free excitons and free electrons in heteroepitaxial GaN thin films has been conducted. It is found that thermal broadening of the LO phonon-assisted photoluminescence peaks is much slower than those of the peaks of their parents so that the first-order LO peaks of the free exciton transition and the band-to-band transition can be well resolved even at room temperature, leading to a direct determination of the band A free exciton binding energy as 25.4±0.9meV. At the same time, we demonstrate that the simple hydrogenlike model still is a good approximation to describe the energy level structure of free excitons in GaN. © 2002 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/55646
ISSN: 00036951
DOI: 10.1063/1.1514391
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