Please use this identifier to cite or link to this item:
https://doi.org/10.1088/1674-4926/31/8/084003
DC Field | Value | |
---|---|---|
dc.title | Diagram representations of charge pumping processes in CMOS transistors | |
dc.contributor.author | Xinyun, H. | |
dc.contributor.author | Guangfan, J. | |
dc.contributor.author | Chen, S. | |
dc.contributor.author | Wei, C. | |
dc.contributor.author | Daming, H. | |
dc.contributor.author | Mingfu, L. | |
dc.date.accessioned | 2014-06-17T02:45:18Z | |
dc.date.available | 2014-06-17T02:45:18Z | |
dc.date.issued | 2010-08 | |
dc.identifier.citation | Xinyun, H., Guangfan, J., Chen, S., Wei, C., Daming, H., Mingfu, L. (2010-08). Diagram representations of charge pumping processes in CMOS transistors. Journal of Semiconductors 31 (8) : -. ScholarBank@NUS Repository. https://doi.org/10.1088/1674-4926/31/8/084003 | |
dc.identifier.issn | 16744926 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/55629 | |
dc.description.abstract | A diagram representation method is proposed to interpret the complicated charge pumping (CP) processes. The fast and slow traps in CP measurement are defined. Some phenomena such as CP pulse rise/fall time dependence, frequency dependence, the voltage dependence for the fast and slow traps, and the geometric CP component are clearly illustrated at a glance by the diagram representation. For the slow trap CP measurement, there is a transition stage and a steady stage due to the asymmetry of the electron and hole capture, and the CP current is determined by the lower capturing electron or hole component. The method is used to discuss the legitimacy of the newly developed modified charge pumping method. © 2010 Chinese Institute of Electronics. | |
dc.source | Scopus | |
dc.subject | Bias temperature instability | |
dc.subject | Charge pumping | |
dc.subject | Interface-trap generation | |
dc.subject | Modified CP | |
dc.subject | Oxide charge | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1088/1674-4926/31/8/084003 | |
dc.description.sourcetitle | Journal of Semiconductors | |
dc.description.volume | 31 | |
dc.description.issue | 8 | |
dc.description.page | - | |
dc.identifier.isiut | 000215719500012 | |
Appears in Collections: | Staff Publications |
Show simple item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.