Please use this identifier to cite or link to this item: https://doi.org/10.1088/1674-4926/31/8/084003
Title: Diagram representations of charge pumping processes in CMOS transistors
Authors: Xinyun, H.
Guangfan, J.
Chen, S.
Wei, C.
Daming, H.
Mingfu, L. 
Keywords: Bias temperature instability
Charge pumping
Interface-trap generation
Modified CP
Oxide charge
Issue Date: Aug-2010
Citation: Xinyun, H., Guangfan, J., Chen, S., Wei, C., Daming, H., Mingfu, L. (2010-08). Diagram representations of charge pumping processes in CMOS transistors. Journal of Semiconductors 31 (8) : -. ScholarBank@NUS Repository. https://doi.org/10.1088/1674-4926/31/8/084003
Abstract: A diagram representation method is proposed to interpret the complicated charge pumping (CP) processes. The fast and slow traps in CP measurement are defined. Some phenomena such as CP pulse rise/fall time dependence, frequency dependence, the voltage dependence for the fast and slow traps, and the geometric CP component are clearly illustrated at a glance by the diagram representation. For the slow trap CP measurement, there is a transition stage and a steady stage due to the asymmetry of the electron and hole capture, and the CP current is determined by the lower capturing electron or hole component. The method is used to discuss the legitimacy of the newly developed modified charge pumping method. © 2010 Chinese Institute of Electronics.
Source Title: Journal of Semiconductors
URI: http://scholarbank.nus.edu.sg/handle/10635/55629
ISSN: 16744926
DOI: 10.1088/1674-4926/31/8/084003
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