Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2823606
Title: Device physics and guiding principles for the design of double-gate tunneling field effect transistor with silicon-germanium source heterojunction
Authors: Toh, E.-H.
Wang, G.H.
Chan, L.
Samudra, G. 
Yeo, Y.-C. 
Issue Date: 2007
Source: Toh, E.-H., Wang, G.H., Chan, L., Samudra, G., Yeo, Y.-C. (2007). Device physics and guiding principles for the design of double-gate tunneling field effect transistor with silicon-germanium source heterojunction. Applied Physics Letters 91 (24) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2823606
Abstract: The device physics and guiding principles for the design of the double-gate tunneling field-effect transistor with silicon-germanium (SiGe) heterojunction source are discussed. Two dimensional device simulations were employed to study the influence of the position of the SiGeSi heterojunction on band-to-band tunneling and device performance. It is established that band-to-band tunneling occurs at a distance of ∼4 nm from the gate edge in the source region. In order for the narrower bandgap of SiGe to play a dominant role, the overlap between the SiGe region and the gate should be such that the whole tunneling path of the electrons is located in SiGe. To harness the maximum benefits of the high band-to-band tunneling rate in SiGe, an overlap of ∼2 nm between the SiGe region and the gate would be required. © 2007 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/55627
ISSN: 00036951
DOI: 10.1063/1.2823606
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

60
checked on Dec 6, 2017

WEB OF SCIENCETM
Citations

43
checked on Nov 21, 2017

Page view(s)

29
checked on Dec 10, 2017

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.