Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2748366
Title: Device physics and design of double-gate tunneling field-effect transistor by silicon film thickness optimization
Authors: Toh, E.-H.
Wang, G.H.
Samudra, G. 
Yeo, Y.-C. 
Issue Date: 2007
Source: Toh, E.-H., Wang, G.H., Samudra, G., Yeo, Y.-C. (2007). Device physics and design of double-gate tunneling field-effect transistor by silicon film thickness optimization. Applied Physics Letters 90 (26) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2748366
Abstract: The device physics of the double-gate tunneling field-effect transistor (DG TFET) is explored through two dimensional device simulations. The on-state drain current Ion of the DG TFET, which is based on band-to-band tunneling, has a strong dependence on the silicon film thickness TSi and the physics governing it is detailed. It is established that band-to-band tunneling at the surface is very strong and accounts for a large part of the total drain current. However, a substantial part of the total drain current Ids is contributed by a subsurface portion of the silicon film. Detailed potential distributions show that the coupling of two gate electrodes in the DG TFET could effectively reduce the tunneling width ωT at the center of the silicon film up to an optimum TSi where maximum drain current is obtained. © 2007 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/55625
ISSN: 00036951
DOI: 10.1063/1.2748366
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