Please use this identifier to cite or link to this item:
|Title:||Device physics and design of double-gate tunneling field-effect transistor by silicon film thickness optimization|
|Source:||Toh, E.-H., Wang, G.H., Samudra, G., Yeo, Y.-C. (2007). Device physics and design of double-gate tunneling field-effect transistor by silicon film thickness optimization. Applied Physics Letters 90 (26) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2748366|
|Abstract:||The device physics of the double-gate tunneling field-effect transistor (DG TFET) is explored through two dimensional device simulations. The on-state drain current Ion of the DG TFET, which is based on band-to-band tunneling, has a strong dependence on the silicon film thickness TSi and the physics governing it is detailed. It is established that band-to-band tunneling at the surface is very strong and accounts for a large part of the total drain current. However, a substantial part of the total drain current Ids is contributed by a subsurface portion of the silicon film. Detailed potential distributions show that the coupling of two gate electrodes in the DG TFET could effectively reduce the tunneling width ωT at the center of the silicon film up to an optimum TSi where maximum drain current is obtained. © 2007 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Dec 14, 2017
WEB OF SCIENCETM
checked on Nov 17, 2017
checked on Dec 10, 2017
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.