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Title: Design of gradient oxide-bypassed superjunction power MOSFET devices
Authors: Chen, Y.
Liang, Y.C. 
Samudra, G.S. 
Keywords: Breakdown voltage
Gradient oxide-bypassed (GOB)
Ideal unipolar silicon limit
Oxide-bypassed (OB)
Specific on-state resistance
Issue Date: Jul-2007
Citation: Chen, Y., Liang, Y.C., Samudra, G.S. (2007-07). Design of gradient oxide-bypassed superjunction power MOSFET devices. IEEE Transactions on Power Electronics 22 (4) : 1303-1310. ScholarBank@NUS Repository.
Abstract: The superjunction MOSFET power devices, such as p-n column superjunction (named SJ or CoolMOS) devices and oxide-bypassed (OB) devices, are highly recognized for their higher blocking capability and lower on-state resistance. However, the performance of SJ devices is greatly handicapped due to difficulties in formation of perfect charge-balanced SJ p-n columns by the current process technology, especially for devices with small widths and voltage ratings below 180 V. OB devices can be an alternative in this voltage region, which utilize the well established oxide thickness control in fabrication instead of the difficult doping control as in SJ devices. However, OB drift region electric field distribution is not as optimal as that in SJ devices. Gradient oxide-bypassed (GOB) structure enhances the performance of OB devices so that it can achieve a performance comparable to that of an ideal p-n column SJ device in the medium voltage range, and at the same time, requires simple process technology. Complete descriptions on the GOB device and related design issues are presented in this paper. Fabrication issues are also discussed with possible sacrificial materials and etchants for making the vertical graded oxide sidewalls. Design cases for 80, 120, and 180 V GOB devices are also illustrated for better understanding in the device. © 2007 IEEE.
Source Title: IEEE Transactions on Power Electronics
ISSN: 08858993
DOI: 10.1109/TPEL.2007.900559
Appears in Collections:Staff Publications

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