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|Title:||Design of 60- and 77-GHz narrow-bandpass filters in CMOS technology|
Thin-film microstrip (TFMS) structure
|Citation:||Nan, L., Mouthaan, K., Xiong, Y.-Z., Shi, J., Rustagi, S.C., Ooi, B.-L. (2008). Design of 60- and 77-GHz narrow-bandpass filters in CMOS technology. IEEE Transactions on Circuits and Systems II: Express Briefs 55 (8) : 738-742. ScholarBank@NUS Repository. https://doi.org/10.1109/TCSII.2008.922427|
|Abstract:||This paper investigates the design and implementation of millimeter-wave narrow-bandpass filters in a standard 0.18-μm CMOS technology. Filters with a measured 10% 3-dB bandwidth at 60 and 77 GHz are realized in a thin-film microstrip structure by using the lowest metallization layer as a ground plane. The impact of dissipation losses of the filters is also examined. It is found that the metallization losses in the coupled-line filter as well as the ground plane are the main reasons for the insertion loss. © 2008 IEEE.|
|Source Title:||IEEE Transactions on Circuits and Systems II: Express Briefs|
|Appears in Collections:||Staff Publications|
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