Please use this identifier to cite or link to this item: https://doi.org/10.1109/TCSII.2008.922427
Title: Design of 60- and 77-GHz narrow-bandpass filters in CMOS technology
Authors: Nan, L.
Mouthaan, K. 
Xiong, Y.-Z.
Shi, J.
Rustagi, S.C.
Ooi, B.-L. 
Keywords: Bandpass filters
CMOS technology
Millimeter-wave
Thin-film microstrip (TFMS) structure
Issue Date: 2008
Source: Nan, L., Mouthaan, K., Xiong, Y.-Z., Shi, J., Rustagi, S.C., Ooi, B.-L. (2008). Design of 60- and 77-GHz narrow-bandpass filters in CMOS technology. IEEE Transactions on Circuits and Systems II: Express Briefs 55 (8) : 738-742. ScholarBank@NUS Repository. https://doi.org/10.1109/TCSII.2008.922427
Abstract: This paper investigates the design and implementation of millimeter-wave narrow-bandpass filters in a standard 0.18-μm CMOS technology. Filters with a measured 10% 3-dB bandwidth at 60 and 77 GHz are realized in a thin-film microstrip structure by using the lowest metallization layer as a ground plane. The impact of dissipation losses of the filters is also examined. It is found that the metallization losses in the coupled-line filter as well as the ground plane are the main reasons for the insertion loss. © 2008 IEEE.
Source Title: IEEE Transactions on Circuits and Systems II: Express Briefs
URI: http://scholarbank.nus.edu.sg/handle/10635/55561
ISSN: 15497747
DOI: 10.1109/TCSII.2008.922427
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