Please use this identifier to cite or link to this item:
|Title:||Dependence of leakage mechanisms on dielectric barrier in Cu-SiOC damascene interconnects|
|Citation:||Ngwan, V.C., Zhu, C., Krishnamoorthy, A. (2004-03-29). Dependence of leakage mechanisms on dielectric barrier in Cu-SiOC damascene interconnects. Applied Physics Letters 84 (13) : 2316-2318. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1688978|
|Abstract:||The leakage mechanisms Cu-SiOC damascene structures with SiC and SiN as two different cu diffusion barriers were studied. A comb capacitor test structure was used to measure the leakage currents in different dies for different temperatures. It was observed that SiOC showed different conduction mechanisms when integrated with SiC barriers than with SiN barriers. It was found that Schottky emission over Ta/SiOC barrier was the dominant leakage mechanism in structure with SiC barriers.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jul 17, 2018
WEB OF SCIENCETM
checked on Jun 27, 2018
checked on May 12, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.