Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1688978
Title: Dependence of leakage mechanisms on dielectric barrier in Cu-SiOC damascene interconnects
Authors: Ngwan, V.C.
Zhu, C. 
Krishnamoorthy, A.
Issue Date: 29-Mar-2004
Source: Ngwan, V.C., Zhu, C., Krishnamoorthy, A. (2004-03-29). Dependence of leakage mechanisms on dielectric barrier in Cu-SiOC damascene interconnects. Applied Physics Letters 84 (13) : 2316-2318. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1688978
Abstract: The leakage mechanisms Cu-SiOC damascene structures with SiC and SiN as two different cu diffusion barriers were studied. A comb capacitor test structure was used to measure the leakage currents in different dies for different temperatures. It was observed that SiOC showed different conduction mechanisms when integrated with SiC barriers than with SiN barriers. It was found that Schottky emission over Ta/SiOC barrier was the dominant leakage mechanism in structure with SiC barriers.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/55525
ISSN: 00036951
DOI: 10.1063/1.1688978
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