Please use this identifier to cite or link to this item: https://doi.org/10.1109/TSM.2007.907610
Title: Critical dimension uniformity via real-time photoresist thickness control
Authors: Ho, W.K. 
Tay, A. 
Chen, M.
Fu, J. 
Lu, H.
Shan, X.
Issue Date: Nov-2007
Source: Ho, W.K., Tay, A., Chen, M., Fu, J., Lu, H., Shan, X. (2007-11). Critical dimension uniformity via real-time photoresist thickness control. IEEE Transactions on Semiconductor Manufacturing 20 (4) : 376-380. ScholarBank@NUS Repository. https://doi.org/10.1109/TSM.2007.907610
Abstract: In this paper, we present the experimental results on wafer-to-wafer and within-wafer critical dimension (CD) control. It is known that photoresist thickness affects CD. In this paper, we control photoresist thickness to control CD. As opposed to run-to-run control where information from the previous wafer or batch is used for control of the current wafer or batch, the approach here is real time and makes use of the current wafer information for control of the current wafer CD. The experiments demonstrate that such an approach can reduce CD nonuniformity wafer to wafer and within wafer. © 2006 IEEE.
Source Title: IEEE Transactions on Semiconductor Manufacturing
URI: http://scholarbank.nus.edu.sg/handle/10635/55472
ISSN: 08946507
DOI: 10.1109/TSM.2007.907610
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