Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2007.910767
Title: Correlation of current noise behavior and dark spot formation in organic light-emitting diodes
Authors: Ke, L.
Kumar, R.S.
Vijila, C.
Chua, S.J. 
Sun, X.W.
Keywords: Characterization
Degradation
Low frequency noise
Organic light emitting diode
Issue Date: Jan-2008
Citation: Ke, L., Kumar, R.S., Vijila, C., Chua, S.J., Sun, X.W. (2008-01). Correlation of current noise behavior and dark spot formation in organic light-emitting diodes. IEEE Electron Device Letters 29 (1) : 67-69. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.910767
Abstract: A correlation between current 1/f noise and dark spot formation is reported. Our results show that the dark spot is primarily correlated to current 1/f noise slope; the higher the slope, the poorer the interface, and the more abnormal dark spot growth rate and the shorter lifetime. Besides, there is a correlation between current 1/f noise magnitude and the dark spot initial size. A higher 1/f noise magnitude generally indicates a larger dark spot initial size. A seemingly identical current-voltage curve does not render the same characteristics of dark spot formation, which can be clearly distinguished from the subtle difference in 1/f noise behavior. The noise measurement can be used to predicate device lifetime and degradation behavior. © 2008 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/55456
ISSN: 07413106
DOI: 10.1109/LED.2007.910767
Appears in Collections:Staff Publications

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