Please use this identifier to cite or link to this item:
https://doi.org/10.1109/LED.2007.910767
Title: | Correlation of current noise behavior and dark spot formation in organic light-emitting diodes |
Authors: | Ke, L. Kumar, R.S. Vijila, C. Chua, S.J. Sun, X.W. |
Keywords: | Characterization Degradation Low frequency noise Organic light emitting diode |
Issue Date: | Jan-2008 |
Citation: | Ke, L., Kumar, R.S., Vijila, C., Chua, S.J., Sun, X.W. (2008-01). Correlation of current noise behavior and dark spot formation in organic light-emitting diodes. IEEE Electron Device Letters 29 (1) : 67-69. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.910767 |
Abstract: | A correlation between current 1/f noise and dark spot formation is reported. Our results show that the dark spot is primarily correlated to current 1/f noise slope; the higher the slope, the poorer the interface, and the more abnormal dark spot growth rate and the shorter lifetime. Besides, there is a correlation between current 1/f noise magnitude and the dark spot initial size. A higher 1/f noise magnitude generally indicates a larger dark spot initial size. A seemingly identical current-voltage curve does not render the same characteristics of dark spot formation, which can be clearly distinguished from the subtle difference in 1/f noise behavior. The noise measurement can be used to predicate device lifetime and degradation behavior. © 2008 IEEE. |
Source Title: | IEEE Electron Device Letters |
URI: | http://scholarbank.nus.edu.sg/handle/10635/55456 |
ISSN: | 07413106 |
DOI: | 10.1109/LED.2007.910767 |
Appears in Collections: | Staff Publications |
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