Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1492011
Title: Correlation between interface traps and gate oxide leakage current in the direct tunneling regime
Authors: Loh, W.Y. 
Cho, B.J. 
Li, M.F. 
Issue Date: 8-Jul-2002
Source: Loh, W.Y., Cho, B.J., Li, M.F. (2002-07-08). Correlation between interface traps and gate oxide leakage current in the direct tunneling regime. Applied Physics Letters 81 (2) : 379-381. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1492011
Abstract: Our experiment shows that when the gate oxide thickness is scaled to direct tunneling regime, the gate leakage current, and the number of interface traps increase in a discrete manner rather than in a gradual increment. A direct correlation between the increments of the gate leakage current and interface traps, irrespective of stressing polarity, is also observed. The discrete increase in gate current is due to degradation at localized spots rather than a uniform degradation over the entire gate area. The increment is also observed over a wide voltage range unlike interface-trap-assisted tunneling previously reported which occurs mainly near the flat-band voltage. A possible mechanism is proposed based on the observations. © 2002 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/55453
ISSN: 00036951
DOI: 10.1063/1.1492011
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