Please use this identifier to cite or link to this item: https://doi.org/10.1007/s10825-008-0243-1
Title: Computational study of double-gate graphene nano-ribbon transistors
Authors: Liang, G. 
Neophytou, N.
Lundstrom, M.S.
Nikonov, D.E.
Keywords: Graphene nanoribbon
MOSFETs
NEGF
Quantum tunneling
Transistors
Issue Date: 2008
Source: Liang, G., Neophytou, N., Lundstrom, M.S., Nikonov, D.E. (2008). Computational study of double-gate graphene nano-ribbon transistors. Journal of Computational Electronics 7 (3) : 394-397. ScholarBank@NUS Repository. https://doi.org/10.1007/s10825-008-0243-1
Abstract: The ballistic performance of graphene nanoribbon (GNR) MOSFETs with different width of armchair GNRs is examined using a real-space quantum simulator based on the Non-equilibrium Green's Function (NEGF) approach, self-consistently coupled to a 3D Poisson's equation for electrostatics. GNR MOSFETs show promising device performance, in terms of low subthreshold swing and small drain-induced-barrier-lowing due to their excellent electrostatics and gate control (single monolayer). However, the quantum tunneling effects play an import role in the GNR device performance degradation for wider width GNR MOSFETs due to their reduced bandgap. At 2.2 nm width, the OFF current performance is completely dominated by tunneling currents, making the OFF-state of the device difficult to control. © Springer Science+Business Media LLC 2008.
Source Title: Journal of Computational Electronics
URI: http://scholarbank.nus.edu.sg/handle/10635/55382
ISSN: 15698025
DOI: 10.1007/s10825-008-0243-1
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