Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.tsf.2010.03.109
Title: Comparative study of aluminium-doped zinc oxide and ruthenium-aluminium co-doped zinc oxide by magnetron co-sputtering
Authors: Wong, L.M.
Wang, S.J.
Chim, W.K. 
Keywords: Aluminium zinc oxide
Ruthenium
Sputtering
Transparent conducting oxide
Issue Date: 1-Oct-2010
Citation: Wong, L.M., Wang, S.J., Chim, W.K. (2010-10-01). Comparative study of aluminium-doped zinc oxide and ruthenium-aluminium co-doped zinc oxide by magnetron co-sputtering. Thin Solid Films 518 (24 SUPPL.) : e93-e97. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2010.03.109
Abstract: Highly oriented polycrystalline aluminium-doped (Al-doped) and ruthenium-aluminium (Ru-Al) co-doped zinc oxide are prepared on borosilicate glass and polycarbonate (PC) substrates by co-sputtering at room temperature. To investigate the effect of Ru doping, co-sputtering is achieved by varying the sputtering power of Ru target while keeping the sputtering target power of Al-doped zinc oxide unchanged. Atomic force microscopy (AFM) data shows that the root-mean-square roughness of all the films is less than ∼ 2.5 nm. With Ru doping, the resistivity of the film improves by one order of magnitude as compared to pure Al-doped zinc oxide sample. The resistivity and carrier concentration values obtained correlated to the degree of crystallinity in the samples. High optical transmittance in the visible range are achieved (> 90% for borosilicate glass and > 80% for PC). © 2010 Elsevier B.V.
Source Title: Thin Solid Films
URI: http://scholarbank.nus.edu.sg/handle/10635/55353
ISSN: 00406090
DOI: 10.1016/j.tsf.2010.03.109
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