Please use this identifier to cite or link to this item: https://doi.org/10.1023/A:1011336726819
Title: Comparative Analysis of Scanning Electron Microscopy Techniques for Semiconductors: Electron-Beam-Induced Potential Method, Single-Contact Electron-Beam-Induced Current Method, and Thermoacoustic Detection
Authors: Rau, E.I.
Gostev, A.V.
Shiqiu, Z.
Phang, D. 
Chan, D. 
Thong, D. 
Wong, W. 
Issue Date: Jul-2001
Source: Rau, E.I.,Gostev, A.V.,Shiqiu, Z.,Phang, D.,Chan, D.,Thong, D.,Wong, W. (2001-07). Comparative Analysis of Scanning Electron Microscopy Techniques for Semiconductors: Electron-Beam-Induced Potential Method, Single-Contact Electron-Beam-Induced Current Method, and Thermoacoustic Detection. Russian Microelectronics 30 (4) : 207-218. ScholarBank@NUS Repository. https://doi.org/10.1023/A:1011336726819
Abstract: The potentialities of three techniques for detecting signals from barrier structures in a scanning electron microscope are discussed. All the methods are virtually contactless; that is, it is only required that the chips are grounded. The relaxation behavior of the signals is considered. The invalidity of the thermoacoustic detection technique is shown. It is experimentally demonstrated that information extracted with the method of electron-beam-induced surface potential is identical to that obtained by thermoacoustic detection.
Source Title: Russian Microelectronics
URI: http://scholarbank.nus.edu.sg/handle/10635/55351
ISSN: 10637397
DOI: 10.1023/A:1011336726819
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