Please use this identifier to cite or link to this item: https://doi.org/10.1126/science.1221561
Title: Breaking the speed limits of phase-change memory
Authors: Loke, D.
Lee, T.H.
Wang, W.J.
Shi, L.P.
Zhao, R.
Yeo, Y.C. 
Chong, T.C.
Elliott, S.R.
Issue Date: 22-Jun-2012
Source: Loke, D., Lee, T.H., Wang, W.J., Shi, L.P., Zhao, R., Yeo, Y.C., Chong, T.C., Elliott, S.R. (2012-06-22). Breaking the speed limits of phase-change memory. Science 336 (6088) : 1566-1569. ScholarBank@NUS Repository. https://doi.org/10.1126/science.1221561
Abstract: Phase-change random-access memory (PCRAM) is one of the leading candidates for next-generation data-storage devices, but the trade-off between crystallization (writing) speed and amorphous-phase stability (data retention) presents a key challenge. We control the crystallization kinetics of a phase-change material by applying a constant low voltage via prestructural ordering (incubation) effects. A crystallization speed of 500 picoseconds was achieved, as well as high-speed reversible switching using 500-picosecond pulses. Ab initio molecular dynamics simulations reveal the phase-change kinetics in PCRAM devices and the structural origin of the incubation-assisted increase in crystallization speed. This paves the way for achieving a broadly applicable memory device, capable of nonvolatile operations beyond gigahertz data-transfer rates.
Source Title: Science
URI: http://scholarbank.nus.edu.sg/handle/10635/55228
ISSN: 00368075
DOI: 10.1126/science.1221561
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