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|Title:||Breaking the speed limits of phase-change memory|
|Source:||Loke, D., Lee, T.H., Wang, W.J., Shi, L.P., Zhao, R., Yeo, Y.C., Chong, T.C., Elliott, S.R. (2012-06-22). Breaking the speed limits of phase-change memory. Science 336 (6088) : 1566-1569. ScholarBank@NUS Repository. https://doi.org/10.1126/science.1221561|
|Abstract:||Phase-change random-access memory (PCRAM) is one of the leading candidates for next-generation data-storage devices, but the trade-off between crystallization (writing) speed and amorphous-phase stability (data retention) presents a key challenge. We control the crystallization kinetics of a phase-change material by applying a constant low voltage via prestructural ordering (incubation) effects. A crystallization speed of 500 picoseconds was achieved, as well as high-speed reversible switching using 500-picosecond pulses. Ab initio molecular dynamics simulations reveal the phase-change kinetics in PCRAM devices and the structural origin of the incubation-assisted increase in crystallization speed. This paves the way for achieving a broadly applicable memory device, capable of nonvolatile operations beyond gigahertz data-transfer rates.|
|Appears in Collections:||Staff Publications|
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