Please use this identifier to cite or link to this item:
|Title:||Band alignment of yttrium oxide on various relaxed and strained semiconductor substrates|
|Citation:||Chiam, S.Y., Chim, W.K., Pi, C., Huan, A.C.H., Wang, S.J., Pan, J.S., Turner, S., Zhang, J. (2008). Band alignment of yttrium oxide on various relaxed and strained semiconductor substrates. Journal of Applied Physics 103 (8) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2904928|
|Abstract:||In this work, we report on the band offsets of yttrium oxide (Y2 O3) on various relaxed and strained semiconductor substrates, such as silicon (Si), germanium (Ge), and silicon germanium (SiGe). By using the example of Y2 O3 /Si, important experimental aspects in using photoemission to determine band offsets are discussed. We then discuss the various values of band offsets of Y2 O3 on the different substrates that we obtained by using x-ray photoelectron spectroscopy. Finally, we show that presputtering 3 Å of metallic Y [equivalent to 1 ML (monolayer) coverage] before the deposition of Y2 O3 affects the band lineup by reducing the resultant valence band offsets. We explain the observed band offsets by using an interfacial layer model. © 2008 American Institute of Physics.|
|Source Title:||Journal of Applied Physics|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Dec 10, 2018
WEB OF SCIENCETM
checked on Nov 26, 2018
checked on Dec 8, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.