Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2904928
Title: Band alignment of yttrium oxide on various relaxed and strained semiconductor substrates
Authors: Chiam, S.Y.
Chim, W.K. 
Pi, C.
Huan, A.C.H.
Wang, S.J.
Pan, J.S.
Turner, S.
Zhang, J.
Issue Date: 2008
Citation: Chiam, S.Y., Chim, W.K., Pi, C., Huan, A.C.H., Wang, S.J., Pan, J.S., Turner, S., Zhang, J. (2008). Band alignment of yttrium oxide on various relaxed and strained semiconductor substrates. Journal of Applied Physics 103 (8) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2904928
Abstract: In this work, we report on the band offsets of yttrium oxide (Y2 O3) on various relaxed and strained semiconductor substrates, such as silicon (Si), germanium (Ge), and silicon germanium (SiGe). By using the example of Y2 O3 /Si, important experimental aspects in using photoemission to determine band offsets are discussed. We then discuss the various values of band offsets of Y2 O3 on the different substrates that we obtained by using x-ray photoelectron spectroscopy. Finally, we show that presputtering 3 Å of metallic Y [equivalent to 1 ML (monolayer) coverage] before the deposition of Y2 O3 affects the band lineup by reducing the resultant valence band offsets. We explain the observed band offsets by using an interfacial layer model. © 2008 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/55187
ISSN: 00218979
DOI: 10.1063/1.2904928
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