Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.3093036
Title: Arrayed sisige nanowire and heterostructure formations via au-assisted wet chemical etching method
Authors: Wang, X.
Pey, K.L.
Choi, W.K. 
Ho, C.K.F.
Fitzgerald, E.
Antoniadis, D.
Issue Date: 2009
Source: Wang, X.,Pey, K.L.,Choi, W.K.,Ho, C.K.F.,Fitzgerald, E.,Antoniadis, D. (2009). Arrayed sisige nanowire and heterostructure formations via au-assisted wet chemical etching method. Electrochemical and Solid-State Letters 12 (5) : K37-K40. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3093036
Abstract: Arrayed SiSiGe nanowires and their heterostructures have been formed using Au-assisted wet chemical etching combined with nanosphere lithography. Because the nanowires are formed from the as-grown films, the chemical compositions and the heterostructures along the growth direction of the formed nanowires, i.e., axial heterostructures, are replicas of that of the grown layered films. The diameter and the lateral arrangement of the nanowires are defined by the lithography method. Si and its Ge alloy nanowires and one-dimensional heterostructures formed using this method may have great potential for vertical logic, photovoltaic, and memory-device applications. © 2009 The Electrochemical Society.
Source Title: Electrochemical and Solid-State Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/55146
ISSN: 10990062
DOI: 10.1149/1.3093036
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