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|Title:||Application of dopant segregation to metal-germanium-metal photodetectors and its dark current suppression mechanism|
|Citation:||Zang, H., Lee, S.J., Loh, W.Y., Wang, J., Yu, M.B., Lo, G.Q., Kwong, D.L., Cho, B.J. (2008). Application of dopant segregation to metal-germanium-metal photodetectors and its dark current suppression mechanism. Applied Physics Letters 92 (5) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2841061|
|Abstract:||We report the mechanism of dopant-segregation (DS) technique as applied in metal-germanium-metal photodetectors (MGM-PDs) for dark current suppression. Photodetectors with various dopant-segregation strategies were designed, fabricated, and characterized. Results show that asymmetric MGM-PD, with n - and p -type dopants segregated separately in two NiGe electrodes, is the optimized scheme in terms of dark current and responsivity. It shows a dark current of 10-6 A at -1 V, which is two to three orders of magnitude lower than that of MGM-PD without DS. n -type dopant (As) segregation in NiGe barrier increases the hole Schottky barrier height to 0.5 eV and, thus, plays a crucial role in dark current suppression. © 2008 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
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