Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2841061
Title: Application of dopant segregation to metal-germanium-metal photodetectors and its dark current suppression mechanism
Authors: Zang, H.
Lee, S.J. 
Loh, W.Y.
Wang, J.
Yu, M.B.
Lo, G.Q.
Kwong, D.L.
Cho, B.J. 
Issue Date: 2008
Source: Zang, H., Lee, S.J., Loh, W.Y., Wang, J., Yu, M.B., Lo, G.Q., Kwong, D.L., Cho, B.J. (2008). Application of dopant segregation to metal-germanium-metal photodetectors and its dark current suppression mechanism. Applied Physics Letters 92 (5) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2841061
Abstract: We report the mechanism of dopant-segregation (DS) technique as applied in metal-germanium-metal photodetectors (MGM-PDs) for dark current suppression. Photodetectors with various dopant-segregation strategies were designed, fabricated, and characterized. Results show that asymmetric MGM-PD, with n - and p -type dopants segregated separately in two NiGe electrodes, is the optimized scheme in terms of dark current and responsivity. It shows a dark current of 10-6 A at -1 V, which is two to three orders of magnitude lower than that of MGM-PD without DS. n -type dopant (As) segregation in NiGe barrier increases the hole Schottky barrier height to 0.5 eV and, thus, plays a crucial role in dark current suppression. © 2008 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/55130
ISSN: 00036951
DOI: 10.1063/1.2841061
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