Please use this identifier to cite or link to this item:
|Title:||Application of dopant segregation to metal-germanium-metal photodetectors and its dark current suppression mechanism|
|Citation:||Zang, H., Lee, S.J., Loh, W.Y., Wang, J., Yu, M.B., Lo, G.Q., Kwong, D.L., Cho, B.J. (2008). Application of dopant segregation to metal-germanium-metal photodetectors and its dark current suppression mechanism. Applied Physics Letters 92 (5) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2841061|
|Abstract:||We report the mechanism of dopant-segregation (DS) technique as applied in metal-germanium-metal photodetectors (MGM-PDs) for dark current suppression. Photodetectors with various dopant-segregation strategies were designed, fabricated, and characterized. Results show that asymmetric MGM-PD, with n - and p -type dopants segregated separately in two NiGe electrodes, is the optimized scheme in terms of dark current and responsivity. It shows a dark current of 10-6 A at -1 V, which is two to three orders of magnitude lower than that of MGM-PD without DS. n -type dopant (As) segregation in NiGe barrier increases the hole Schottky barrier height to 0.5 eV and, thus, plays a crucial role in dark current suppression. © 2008 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Oct 17, 2018
WEB OF SCIENCETM
checked on Oct 9, 2018
checked on Aug 31, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.