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|Title:||Anomalous temperature dependence of diode saturation currents in polycrystalline silicon thin-film solar cells on glass|
|Citation:||Wong, J., Huang, J.L., Kunz, O., Ouyang, Z., He, S., Widenborg, P.I., Aberle, A.G., Keevers, M., Green, M.A. (2009). Anomalous temperature dependence of diode saturation currents in polycrystalline silicon thin-film solar cells on glass. Journal of Applied Physics 105 (10) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3131665|
|Abstract:||Temperature dependent Suns- Voc measurements are performed on four types of polycrystalline silicon thin-film solar cells on glass substrates, all of which are made by solid phase crystallizationepitaxy of amorphous silicon from plasma enhanced chemical vapor deposition or e-beam evaporation. Under the two-diode model, the diode saturation currents corresponding to n=1 recombination processes for these polycrystalline silicon p-n junction cells follow an Arrhenius law with activation energies about 0.15-0.18 eV lower than that of single-crystal silicon p-n diodes of 1.206 eV, regardless of whether the cells have an n - or p -type base. This discrepancy manifests itself unambiguously in a reduced temperature sensitivity of the open-circuit voltage in thin-film polycrystalline silicon solar cells compared to single-crystal silicon cells with similar voltages. The physical origin of the lowered activation energy is attributed to subgap levels acting either as minority carrier traps or shallow recombination centers. © 2009 American Institute of Physics.|
|Source Title:||Journal of Applied Physics|
|Appears in Collections:||Staff Publications|
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