Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3131665
Title: Anomalous temperature dependence of diode saturation currents in polycrystalline silicon thin-film solar cells on glass
Authors: Wong, J.
Huang, J.L.
Kunz, O.
Ouyang, Z.
He, S.
Widenborg, P.I.
Aberle, A.G. 
Keevers, M.
Green, M.A.
Issue Date: 2009
Source: Wong, J.,Huang, J.L.,Kunz, O.,Ouyang, Z.,He, S.,Widenborg, P.I.,Aberle, A.G.,Keevers, M.,Green, M.A. (2009). Anomalous temperature dependence of diode saturation currents in polycrystalline silicon thin-film solar cells on glass. Journal of Applied Physics 105 (10) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3131665
Abstract: Temperature dependent Suns- Voc measurements are performed on four types of polycrystalline silicon thin-film solar cells on glass substrates, all of which are made by solid phase crystallizationepitaxy of amorphous silicon from plasma enhanced chemical vapor deposition or e-beam evaporation. Under the two-diode model, the diode saturation currents corresponding to n=1 recombination processes for these polycrystalline silicon p-n junction cells follow an Arrhenius law with activation energies about 0.15-0.18 eV lower than that of single-crystal silicon p-n diodes of 1.206 eV, regardless of whether the cells have an n - or p -type base. This discrepancy manifests itself unambiguously in a reduced temperature sensitivity of the open-circuit voltage in thin-film polycrystalline silicon solar cells compared to single-crystal silicon cells with similar voltages. The physical origin of the lowered activation energy is attributed to subgap levels acting either as minority carrier traps or shallow recombination centers. © 2009 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/55123
ISSN: 00218979
DOI: 10.1063/1.3131665
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