Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2781248
Title: Annealing effects on electrical and optical properties of ZnO thin-film samples deposited by radio frequency-magnetron sputtering on GaAs (001) substrates
Authors: Liu, H.F.
Chua, S.J.
Hu, G.X. 
Gong, H. 
Xiang, N. 
Issue Date: 2007
Source: Liu, H.F., Chua, S.J., Hu, G.X., Gong, H., Xiang, N. (2007). Annealing effects on electrical and optical properties of ZnO thin-film samples deposited by radio frequency-magnetron sputtering on GaAs (001) substrates. Journal of Applied Physics 102 (6) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2781248
Abstract: The effects of thermal annealing on Hall-effect measurement and photoluminescence (PL) from undoped n -type ZnO/GaAs thin-film samples have been studied. The evolutions of carrier concentration, electrical resistivity, and PL spectrum at various annealing conditions reveal that the dominant mechanism that affects the electrical and PL properties is dependent on the amount of thermal energy and the ambient pressure applied during the annealing process. At low annealing temperatures, annihilation of native defects is dominant in reducing the carrier concentration and weakening the low-energy tail of the main PL peak, while the GaAs substrate plays only a minor role in carrier compensations. For the higher temperatures, diffusion of Ga atoms from the GaAs substrate into ZnO film leads to a more n -type conduction of the sample. As a result, the PL exhibits a high-energy tail due to the high-level doping. © 2007 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/55120
ISSN: 00218979
DOI: 10.1063/1.2781248
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

28
checked on Dec 13, 2017

WEB OF SCIENCETM
Citations

24
checked on Nov 14, 2017

Page view(s)

30
checked on Dec 16, 2017

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.