Please use this identifier to cite or link to this item: https://doi.org/10.1109/16.918239
Title: Analysis of the DCIV peaks in electrically stressed pMOSFETs
Authors: Jie, B.B.
Chim, W.K. 
Li, M.-F. 
Lo, K.F.
Keywords: CMOSFETs
Hot carrier
Reliability
Semiconductor-insulator interface
Issue Date: May-2001
Source: Jie, B.B.,Chim, W.K.,Li, M.-F.,Lo, K.F. (2001-05). Analysis of the DCIV peaks in electrically stressed pMOSFETs. IEEE Transactions on Electron Devices 48 (5) : 913-920. ScholarBank@NUS Repository. https://doi.org/10.1109/16.918239
Abstract: This paper presents the effects of Fowler-Nordheim (FN) and hot-carrier (HC) stress in the direct-current current-voltage (DCIV) measurements. The effects of interface trapped charge on DCIV curves is reported. Stress-induced oxide charge shifts the DCIV peaks, while stress-induced interface trapped charge causes a spread in the DCIV peaks. It is found that under HC stress, when the absolute value of stress gate voltage changes from low to high, the interface trap spatial location moves from the drain region to the channel region. It is inferred that the generation of oxide charge in the drain region is a two-step process. For short stress times, electrons mainly fill the process-induced neutral oxide traps, while for long stress times, electrons fill the stress created electron traps.
Source Title: IEEE Transactions on Electron Devices
URI: http://scholarbank.nus.edu.sg/handle/10635/55095
ISSN: 00189383
DOI: 10.1109/16.918239
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