Please use this identifier to cite or link to this item: https://doi.org/10.1109/TIM.2003.815987
Title: An in-situ temperature measurement system for DUV lithography
Authors: Tan, W.W. 
Li, R.F.Y.
Keywords: In-situ temperature measurement
LCSR test
Measurement accuracy
Out-of-contact fault
Post-exposure bake
Issue Date: Aug-2003
Source: Tan, W.W.,Li, R.F.Y. (2003-08). An in-situ temperature measurement system for DUV lithography. IEEE Transactions on Instrumentation and Measurement 52 (4) : 1136-1142. ScholarBank@NUS Repository. https://doi.org/10.1109/TIM.2003.815987
Abstract: Spatial uniformity of temperature across a silicon wafer is an important requirement during the post-exposure bake step of the deep-ultra-violet lithography process. Closed-loop temperature control provides a means by which the stringent temperature specifications can be achieved, provided that accurate feedback signal is available. As each new wafer is loaded for processing, its level of thermal contact with the temperature sensor may vary, leading to erroneous measurement of the wafer temperature. Such variation in thermal contact manifests itself as changes in the time constant of the sensor. This paper describes a method for in-situ estimation of the sensor parameters, and proposes an algorithm for post-processing the sensor output to improve measurement accuracy. Experimental results are presented to demonstrate the effectiveness of the algorithm in improving the accuracy of the feedback signal, thereby reducing the undesirable influence of poor thermal contact on the performance of the closed-loop temperature control system.
Source Title: IEEE Transactions on Instrumentation and Measurement
URI: http://scholarbank.nus.edu.sg/handle/10635/55034
ISSN: 00189456
DOI: 10.1109/TIM.2003.815987
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