Please use this identifier to cite or link to this item:
|Title:||AlGaAs/GaAs HBT model estimation through the generalized pencil-of-function method|
|Authors:||Ooi, B.L. |
Generalized pencil-of-function method
|Source:||Ooi, B.L., Zhou, T.S., Kooi, P.S. (2001-07). AlGaAs/GaAs HBT model estimation through the generalized pencil-of-function method. IEEE Transactions on Microwave Theory and Techniques 49 (7) : 1289-1294. ScholarBank@NUS Repository. https://doi.org/10.1109/22.932249|
|Abstract:||An efficient technique of extracting the small-signal model parameters of the heterojunction bipolar transistor (HBT) is proposed in this paper. The relation between the extrinsic and intrinsic model parameters, which can be employed to drastically reduce the search space, is studied in depth. For the first time, the HBT transistor is characterized by describing S-parameters with a set of complex exponentials using the generalized pencil-of-function method. The reliable initial values of some extrinsic elements can be determined from the set of complex exponentials. This novel approach can yield a good fit between measured and simulated S-parameters.|
|Source Title:||IEEE Transactions on Microwave Theory and Techniques|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 28, 2018
WEB OF SCIENCETM
checked on Feb 20, 2018
checked on Mar 12, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.