Please use this identifier to cite or link to this item:
https://doi.org/10.1109/TPEL.2003.816196
DC Field | Value | |
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dc.title | Accurate current sensor for lateral IGBT smart power integration | |
dc.contributor.author | Liang, Y.C. | |
dc.contributor.author | Samudra, G.S. | |
dc.contributor.author | Lim, J.D. | |
dc.contributor.author | Ong, P.H. | |
dc.date.accessioned | 2014-06-17T02:36:23Z | |
dc.date.available | 2014-06-17T02:36:23Z | |
dc.date.issued | 2003-09 | |
dc.identifier.citation | Liang, Y.C., Samudra, G.S., Lim, J.D., Ong, P.H. (2003-09). Accurate current sensor for lateral IGBT smart power integration. IEEE Transactions on Power Electronics 18 (5) : 1238-1243. ScholarBank@NUS Repository. https://doi.org/10.1109/TPEL.2003.816196 | |
dc.identifier.issn | 08858993 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/54863 | |
dc.description.abstract | This paper describes research work on the design and fabrication of current sensor suitable for smart power integration in lateral insulated-gate bipolar transistor (LIGBT) structure. In general, the proposed design can also be used for various types of MOS- controlled bipolar transistor structures. Both the electron and hole current sensor layers are integrated in a concise form within the device structure. The sensing performance was further refined with the proposed flat-top doping profile achievable through a double-implantation, single-anneal and post-anneal-oxidation approach. The integrated structure was fabricated on silicon wafer with laboratory measurements performed to verify its electrical performance. The sensing ratio is maintained at a relatively constant level with a variation of within ±0.46% and ±1.2% (as a switching device), and ±0.85% and ±1.73% (as an amplifier device), respectively, when anode current and gate voltage vary. For operating temperature range of 300 K to 400 K, the sensor is able to maintain a sensing ratio within ±5.2% variation. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/TPEL.2003.816196 | |
dc.source | Scopus | |
dc.subject | IGBT | |
dc.subject | Integrated current sensor | |
dc.subject | Smart power integration | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1109/TPEL.2003.816196 | |
dc.description.sourcetitle | IEEE Transactions on Power Electronics | |
dc.description.volume | 18 | |
dc.description.issue | 5 | |
dc.description.page | 1238-1243 | |
dc.description.coden | ITPEE | |
dc.identifier.isiut | 000184925100016 | |
Appears in Collections: | Staff Publications |
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