Please use this identifier to cite or link to this item: https://doi.org/10.1109/TPEL.2003.816196
Title: Accurate current sensor for lateral IGBT smart power integration
Authors: Liang, Y.C. 
Samudra, G.S. 
Lim, J.D.
Ong, P.H.
Keywords: IGBT
Integrated current sensor
Smart power integration
Issue Date: Sep-2003
Source: Liang, Y.C.,Samudra, G.S.,Lim, J.D.,Ong, P.H. (2003-09). Accurate current sensor for lateral IGBT smart power integration. IEEE Transactions on Power Electronics 18 (5) : 1238-1243. ScholarBank@NUS Repository. https://doi.org/10.1109/TPEL.2003.816196
Abstract: This paper describes research work on the design and fabrication of current sensor suitable for smart power integration in lateral insulated-gate bipolar transistor (LIGBT) structure. In general, the proposed design can also be used for various types of MOS- controlled bipolar transistor structures. Both the electron and hole current sensor layers are integrated in a concise form within the device structure. The sensing performance was further refined with the proposed flat-top doping profile achievable through a double-implantation, single-anneal and post-anneal-oxidation approach. The integrated structure was fabricated on silicon wafer with laboratory measurements performed to verify its electrical performance. The sensing ratio is maintained at a relatively constant level with a variation of within ±0.46% and ±1.2% (as a switching device), and ±0.85% and ±1.73% (as an amplifier device), respectively, when anode current and gate voltage vary. For operating temperature range of 300 K to 400 K, the sensor is able to maintain a sensing ratio within ±5.2% variation.
Source Title: IEEE Transactions on Power Electronics
URI: http://scholarbank.nus.edu.sg/handle/10635/54863
ISSN: 08858993
DOI: 10.1109/TPEL.2003.816196
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