Please use this identifier to cite or link to this item:
|Title:||A new insight into the degradation behavior of the LDD N-MOSFET during dynamic hot-carrier stressing|
|Source:||Ang, D.S. (2001-11). A new insight into the degradation behavior of the LDD N-MOSFET during dynamic hot-carrier stressing. IEEE Electron Device Letters 22 (11) : 553-555. ScholarBank@NUS Repository. https://doi.org/10.1109/55.962661|
|Abstract:||A new degradation behavior of the LDD N-MOSFET during dynamic hot-carrier stress is presented. Increased degradation occurs during gate pulse transition, and involves hot-hole injection that initially begins in the oxide-spacer region, and later propagates to the channel region. Experimental results clearly show that increased degradation of the linear drain current and transconductance are mainly due to hole-induced interface traps in the oxide-spacer region. Electron trapping at hole-induced oxide defects, on the other hand, is mainly responsible for the enhanced threshold voltage shift in the late stage, when hole injection coincides with electron injection in the channel region.|
|Source Title:||IEEE Electron Device Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 22, 2018
WEB OF SCIENCETM
checked on Jan 23, 2018
checked on Feb 19, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.