Please use this identifier to cite or link to this item: https://doi.org/10.1109/TVT.2007.914063
Title: A distributed millimeter-wave small-signal HBT model based on electromagnetic simulation
Authors: Ooi, B.-L. 
Zhong, Z. 
Wang, Y. 
Shan, X.C.
Lu, A.
Keywords: Distributed model
Electromagnetic (EM) simulation
Global modeling
Heterojunction bipolar transistor (HBT)
Small-signal model
Issue Date: 2008
Source: Ooi, B.-L., Zhong, Z., Wang, Y., Shan, X.C., Lu, A. (2008). A distributed millimeter-wave small-signal HBT model based on electromagnetic simulation. IEEE Transactions on Vehicular Technology 57 (5) : 2667-2674. ScholarBank@NUS Repository. https://doi.org/10.1109/TVT.2007.914063
Abstract: In this paper, a novel distributed small-signal heterojunction bipolar transistor (HBT) model at millimeter-wave frequencies is proposed. This new approach integrates the electromagnetic (EM) simulation of the outer extrinsic passive part of an HBT, the coupled transmission lines for the fingers, and the Gupta multiport connection into an efficient global distributed modeling approach. For the first time, the values of the entire HBT intrinsic model elements used in the active elementary cells (AECs) can subsequently be extracted through the explicit analytical expressions derived through the multiport connection method. Good agreement between the measured and the simulated results has been demonstrated. This model has several unique advantages for microwave transistor optimization and synthesis in that the derived explicit analytical expressions are in terms of the effect of the extrinsic parts, allowing the designer to have better control over the whole transistor design. Furthermore, it serves as one of the valuable steps toward global modeling of millimeter-wave devices and circuits. © 2008 IEEE.
Source Title: IEEE Transactions on Vehicular Technology
URI: http://scholarbank.nus.edu.sg/handle/10635/54083
ISSN: 00189545
DOI: 10.1109/TVT.2007.914063
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