Please use this identifier to cite or link to this item: https://doi.org/10.1109/LMWC.2013.2251620
Title: A 19.2 > 45 dB gain and high-selectivity 94 GHz LNA in 0.13 μm SiGe BiCMOS
Authors: Bi, X.
Guo, Y. 
Xiong, Y.Z.
Arasu, M.A.
Je, M.
Keywords: Cascode
low noise amplifier (LNA)
q-enhanced
shape-factor (SF)
SiGe BiCMOS
Issue Date: 2013
Source: Bi, X., Guo, Y., Xiong, Y.Z., Arasu, M.A., Je, M. (2013). A 19.2 > 45 dB gain and high-selectivity 94 GHz LNA in 0.13 μm SiGe BiCMOS. IEEE Microwave and Wireless Components Letters 23 (5) : 261-263. ScholarBank@NUS Repository. https://doi.org/10.1109/LMWC.2013.2251620
Abstract: In this letter, a high-gain and selectivity W-band LNA using 0.13 μm SiGe BiCMOS is proposed. A Q-enhanced cascode approach with a filter synthesis passband-forming technique was employed to achieve gain and selectivity improvement simultaneously. The amplifier achieved a gain of above 45 dB and a noise figure of 6-8.3 dB at 77-101 GHz with a power consumption of 19.2 mW. The LNA has high selectivity with a 3 dB-to-35 dB shape factor of 2.1, which is comparable with silicon-based passive millimeter-wave filters. © 2001-2012 IEEE.
Source Title: IEEE Microwave and Wireless Components Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/53881
ISSN: 15311309
DOI: 10.1109/LMWC.2013.2251620
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