Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/53851
DC FieldValue
dc.title2 × 3 photonic switch in SiGe for 1.55 μm operation
dc.contributor.authorChen, Z.
dc.contributor.authorLi, B.
dc.contributor.authorChaudhari, B.S.
dc.contributor.authorChua, S.J.
dc.date.accessioned2014-06-16T09:22:41Z
dc.date.available2014-06-16T09:22:41Z
dc.date.issued2006-03
dc.identifier.citationChen, Z.,Li, B.,Chaudhari, B.S.,Chua, S.J. (2006-03). 2 × 3 photonic switch in SiGe for 1.55 μm operation. Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors 27 (3) : 494-498. ScholarBank@NUS Repository.
dc.identifier.issn02534177
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/53851
dc.description.abstractA silicon-based photonic switch is proposed and simulated based on the multimode interference (MMI) principle and the free-carrier plasma dispersion effect in silicon-germanium. The proposed switch, designed for 1.55 μm window operation, is useful for DWDM optical networks. The switch consists of two input single-mode ridge waveguide ports, a MMI section, and three output single-mode ridge waveguide ports. In the MMI section, two index-modulation regions are placed to divert input optical signals from the two input ports to each of the three output ports. Switching characteristics are demonstrated theoretically by a beam propagation method for 1.55 μm operation. The simulated results show that the insertion loss of the switch is less than 1.43 dB, and the crosstalk is between -18 and -32.8 dB.
dc.sourceScopus
dc.subjectIntegrated optics
dc.subjectMultimode interference
dc.subjectPhotonic switch
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.sourcetitlePan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
dc.description.volume27
dc.description.issue3
dc.description.page494-498
dc.description.codenPTTPD
dc.identifier.isiutNOT_IN_WOS
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