Please use this identifier to cite or link to this item: https://doi.org/10.1557/mrs.2012.204
Title: STM studies of epitaxial graphene
Authors: Wong, S.L.
Huang, H. 
Chen, W. 
Wee, A.T.S. 
Issue Date: Nov-2012
Source: Wong, S.L., Huang, H., Chen, W., Wee, A.T.S. (2012-11). STM studies of epitaxial graphene. MRS Bulletin 37 (12) : 1195-1202. ScholarBank@NUS Repository. https://doi.org/10.1557/mrs.2012.204
Abstract: This article reviews the use of scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) to characterize the physical and electronic properties of epitaxial graphene. Topographical variations revealed by STM allow the determination of the number of graphene layers and the detection of lattice mismatch between the graphene and the substrate, as well as rotational disorder. STS allows the local electronic characterization of graphene. STM/STS can also be used to perform local studies of graphene modification through processes such as atomic/molecular adsorption and intercalation. © Copyright 2012 Materials Research Society.
Source Title: MRS Bulletin
URI: http://scholarbank.nus.edu.sg/handle/10635/53356
ISSN: 08837694
DOI: 10.1557/mrs.2012.204
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