Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.tsf.2011.03.077
Title: Influences of sputtering gas pressure and gas flow rate on microwave characteristics of FeCoAlO thin films
Authors: Xu, F.
Xie, Q.
Phuoc, N.N. 
Li, S.
Ong, C.K. 
Keywords: Microwave
Permeability spectra
Sputtering
Thin film
Issue Date: 30-Sep-2011
Source: Xu, F., Xie, Q., Phuoc, N.N., Li, S., Ong, C.K. (2011-09-30). Influences of sputtering gas pressure and gas flow rate on microwave characteristics of FeCoAlO thin films. Thin Solid Films 519 (23) : 8292-8295. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2011.03.077
Abstract: In this work, the influences of sputtering gas pressure and gas flow rate on the microwave characteristics of FeCoAlO thin films are investigated. All the high-frequency permeability spectra are discussed based on the Landau-Lifshitz-Gilbert equation. Although no obvious dependences on the pressure can be identified from the static magnetic hysteresis loops, the parameters obtained from the permeability spectra show strong dependences on the sputtering gas pressure. At 2 mTorr, the lowest damping factor and the highest anisotropy field are located. With the increase of gas flow rate, the resonance frequency decreases and frequency linewidth increases. Discussions infer that these dependences should be ascribed to the inner stress of the sputtered film which is influenced by the sputtering gas conditions. © 2011 Elsevier B.V. All rights reserved.
Source Title: Thin Solid Films
URI: http://scholarbank.nus.edu.sg/handle/10635/53295
ISSN: 00406090
DOI: 10.1016/j.tsf.2011.03.077
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