Please use this identifier to cite or link to this item: https://doi.org/9/095306
Title: Surface phase transition of Cu/Si(1 1 1)-(5 × 5) by scanning tunnelling microscopy and photoemission study
Authors: Zhang, Y.P. 
Yong, K.S.
Chan, H.S.O. 
Xu, G.Q. 
Gao, X.Y. 
Qi, D.C. 
Wang, X.S. 
Wee, A.T.S. 
Issue Date: 7-May-2008
Source: Zhang, Y.P.,Yong, K.S.,Chan, H.S.O.,Xu, G.Q.,Gao, X.Y.,Qi, D.C.,Wang, X.S.,Wee, A.T.S. (2008-05-07). Surface phase transition of Cu/Si(1 1 1)-(5 × 5) by scanning tunnelling microscopy and photoemission study. Journal of Physics D: Applied Physics 41 (9) : -. ScholarBank@NUS Repository. https://doi.org/9/095306
Abstract: The phase transition process from the Si(1 1 1)-(7 × 7) surface to the Cu/Si(1 1 1)-(5 × 5) surface structure has been studied by scanning tunnelling microscopy and synchrotron radiation photoemission spectroscopy. The nucleation and growth of Cu/Si(1 1 1)-(5 × 5) on the Si(1 1 1)-(7 × 7) surface progress gradually with the increase in Cu coverage. Cu deposition on the Si(1 1 1)-(7 × 7) surface at room temperature may only involve the saturation of the surface dangling bonds, whereas a new surface phase of Cu/Si(1 1 1)-(5 × 5) is formed upon annealing, which saturates at a Cu coverage of 0.9 ML. Our experiments clearly show the surface phase transition process of the (5 × 5) structure as a function of the Cu coverage and provide useful insight into the Cu/Si(1 1 1)-(5 × 5) structure. © 2008 IOP Publishing Ltd.
Source Title: Journal of Physics D: Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/53201
ISSN: 00223727
DOI: 9/095306
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