Please use this identifier to cite or link to this item: https://doi.org/10.1103/PhysRevLett.103.036601
Title: Role of δ-Hole-doped interfaces at ohmic contacts to organic semiconductors
Authors: Zhou, M. 
Chua, L.-L. 
Png, R.-Q. 
Yong, C.-K. 
Sivaramakrishnan, S. 
Chia, P.-J. 
Wee, A.T.S. 
Friend, R.H. 
Ho, P.K.H. 
Issue Date: 6-Aug-2009
Source: Zhou, M., Chua, L.-L., Png, R.-Q., Yong, C.-K., Sivaramakrishnan, S., Chia, P.-J., Wee, A.T.S., Friend, R.H., Ho, P.K.H. (2009-08-06). Role of δ-Hole-doped interfaces at ohmic contacts to organic semiconductors. Physical Review Letters 103 (3) : -. ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevLett.103.036601
Abstract: An electromodulated absorption spectroscopy study of the contact between an organic semiconductor (OSC) poly(2,5-dialkoxy-p-phenylenevinylene) and p-doped poly(3,4-ethylenedioxythiophene) electrodes of different work functions (φvac) reveals direct evidence for the formation of a hole-doped layer at the OSC interface in equilibrium with high-φvac electrodes. When the hole density at this interface exceeds a few 1011cm-2, degenerate "bandlike" polaron states emerge. This appears to be crucial to furnish efficient carrier injection into the bulk of the OSC to achieve Ohmic injection. The gap measured by ultraviolet photoemission between the electrode Fermi level and the OSC transport level (typically pinned at 0.6eV) does not reflect the true injection barrier. © 2009 The American Physical Society.
Source Title: Physical Review Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/53143
ISSN: 00319007
DOI: 10.1103/PhysRevLett.103.036601
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