Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1728305
Title: Native oxide decomposition and local oxidation of 6H-SiC (0001) surface by atomic force microscopy
Authors: Xie, X.N. 
Chung, H.J. 
Sow, C.H. 
Wee, A.T.S. 
Issue Date: 14-Jun-2004
Source: Xie, X.N., Chung, H.J., Sow, C.H., Wee, A.T.S. (2004-06-14). Native oxide decomposition and local oxidation of 6H-SiC (0001) surface by atomic force microscopy. Applied Physics Letters 84 (24) : 4914-4916. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1728305
Abstract: The observation of the native oxide decomposition and local oxide growth on 6H-silicon carbide (0001) surface induced by atomic force microscopy (AFM) was analyzed. Native oxide was decomposed and assembled into protruded lines, when the biased AFM probe was scanned over surface areas. Direct oxidation of silicon carbide (SiC) was achieved, when the probe was immobilized and longer bias duration applied. In terms of interface barrier height, the dielectric properties of AFM oxide on SiC were also investigated.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/53052
ISSN: 00036951
DOI: 10.1063/1.1728305
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