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|Title:||High-performance polymer semiconducting heterostructure devices by nitrene-mediated photocrosslinking of alkyl side chains|
|Authors:||Png, R.-Q. |
|Source:||Png, R.-Q.,Chia, P.-J.,Tang, J.-C.,Liu, B.,Sivaramakrishnan, S.,Zhou, M.,Khong, S.-H.,Chan, H.S.O.,Burroughes, J.H.,Chua, L.-L.,Friend, R.H.,Ho, P.K.H. (2010-02). High-performance polymer semiconducting heterostructure devices by nitrene-mediated photocrosslinking of alkyl side chains. Nature Materials 9 (2) : 152-158. ScholarBank@NUS Repository. https://doi.org/10.1038/nmat2594|
|Abstract:||Heterostructures are central to the efficient manipulation of charge carriers, excitons and photons for high-performance semiconductor devices. Although these can be formed by stepwise evaporation of molecular semiconductors, they are a considerable challenge for polymers owing to re-dissolution of the underlying layers. Here we demonstrate a simple and versatile photocrosslinking methodology based on sterically hindered bis(fluorophenyl azide)s. The photocrosslinking efficiency is high and dominated by alkyl side-chain insertion reactions, which do not degrade semiconductor properties. We demonstrate two new back-infiltrated and contiguous interpenetrating donor-acceptor heterostructures for photovoltaic applications that inherently overcome internal recombination losses by ensuring path continuity to give high carrier-collection efficiency. This provides the appropriate morphology for high-efficiency polymer-based photovoltaics. We also demonstrate photopatternable polymer-based field-effect transistors and light-emitting diodes, and highly efficient separate-confinement-heterostructure light-emitting diodes. These results open the way to the general development of high-performance polymer semiconductor heterostructures that have not previously been thought possible. © 2010 Macmillan Publishers Limited. All rights reserved.|
|Source Title:||Nature Materials|
|Appears in Collections:||Staff Publications|
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