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|Title:||Intense green light from a silyl-substituted poly(p-phenylenevinylene)- based light-emitting diode with air-stable cathode|
|Authors:||Chen, Z.-K. |
|Citation:||Chen, Z.-K., Wang, L.-H., Kang, E.-T., Huang, W. (1999-08-15). Intense green light from a silyl-substituted poly(p-phenylenevinylene)- based light-emitting diode with air-stable cathode. Physical Chemistry Chemical Physics 1 (16) : 3789-3792. ScholarBank@NUS Repository. https://doi.org/10.1039/a904179f|
|Abstract:||A silicon-containing poly(p-phenylenevinylene) derivative, poly[2,5- bis(butyldimethylsilyl)-1,4-phenylenevinylene] (BS-PPV), was synthesized via the Gilch reaction. The polymer is fully solution processable with high thermal stability. The UV-Vis absorption and fluorescent emission spectra demonstrate that BS-PPV is a promising green emissive material for light- emitting device application. Cyclic voltammetric measurements indicate that it can be reversibly n-doped and irreversibly p-doped with the onset oxidation and reduction potentials of 1.16 and - 1.81 V, respectively. The HOMO and LUMO energy levels of BS-PPV were estimated to be 5.56 and 2.59 eV, respectively. Single layer devices with the configuration ITO/BS-PPV/A1 were fabricated, which showed a turn-on voltage of 6 V and intense green light was observed at around 7.5 V. The performance is better than that of devices fabricated with other silicon-containing PPV-based polymers.|
|Source Title:||Physical Chemistry Chemical Physics|
|Appears in Collections:||Staff Publications|
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