Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.3043416
Title: Large-surface-area nanowall sns films prepared by chemical bath deposition
Authors: Wang, Y.
Reddy, Y.B.K. 
Gong, H. 
Issue Date: 2009
Source: Wang, Y., Reddy, Y.B.K., Gong, H. (2009). Large-surface-area nanowall sns films prepared by chemical bath deposition. Journal of the Electrochemical Society 156 (3) : H157-H160. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3043416
Abstract: The growth of tin sulfide (SnS) films with large surface area have been accomplished. A uniform nanowall SnS thin film over the entire substrate was achieved by using an economic chemical bath deposition method and observed by scanning electron microscopy. Microstructure, phase confirmation, and optical properties were investigated. X-ray diffraction pattern and transmission electron microscopy revealed that the tin sulfide film by chemical bath deposition exhibited polycrystalline orthorhombic structure. The optical absorption coefficient was high, more than 104 cm-1, which is beneficial for a photovoltaic device. An optical indirect bandgap of SnS film was obtained to be 1.19 eV. The effect of SnS film thickness on bandgap was also investigated. When the thickness was small, in the range of less than 500 nm, the bandgap of SnS film increased with the increase of thickness. When the thickness was large, in the range of more than 500 nm, the bandgap slightly decreased with the increase of thickness. The photoconductivity increased with the increase of film thickness for the nanowall SnS thin films. © 2008 The Electrochemical Society.
Source Title: Journal of the Electrochemical Society
URI: http://scholarbank.nus.edu.sg/handle/10635/52622
ISSN: 00134651
DOI: 10.1149/1.3043416
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