Please use this identifier to cite or link to this item: https://doi.org/10.1103/PhysRevB.73.035428
Title: Hole transport through proton-irradiated p -type silicon wafers during electrochemical anodization
Authors: Breese, M.B.H. 
Champeaux, F.J.T.
Teo, E.J. 
Bettiol, A.A. 
Blackwood, D.J. 
Issue Date: 2006
Source: Breese, M.B.H., Champeaux, F.J.T., Teo, E.J., Bettiol, A.A., Blackwood, D.J. (2006). Hole transport through proton-irradiated p -type silicon wafers during electrochemical anodization. Physical Review B - Condensed Matter and Materials Physics 73 (3) : -. ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevB.73.035428
Abstract: The hole current density flowing through and around proton-irradiated areas of p -type silicon during electrochemical anodization is simulated and studied experimentally using scanning electron microscopy and photoluminescence imaging. It is shown that for certain irradiation geometries the current flow may be either reduced or enhanced in areas adjacent to irradiated lines, resulting in enhanced or reduced rates of porous silicon formation and corresponding changes in photoluminescence intensity and feature height. The current flow to the surface is unaffected by both the beam straggle and the high defect density at the end of ion range, enabling feature dimensions of ∼200 nm to be attained. This study has enabled fabrication of micromachined and patterned porous silicon structures in anodized wafers with accurate control of feature dimensions, layer thickness, and photoluminescence emission wavelength and intensity. © 2006 The American Physical Society.
Source Title: Physical Review B - Condensed Matter and Materials Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/52620
ISSN: 10980121
DOI: 10.1103/PhysRevB.73.035428
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