Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/51978
Title: Strain Engineering for Advanced Silicon Transistors
Authors: DING YINJIE
Keywords: Silicon;MOSFET;Transistor;Strain;GeSbTe;ZnS
Issue Date: 4-Nov-2013
Source: DING YINJIE (2013-11-04). Strain Engineering for Advanced Silicon Transistors. ScholarBank@NUS Repository.
Abstract: In this thesis, novel strain engineering techniques were explored and demonstrated in advanced Si transistors, such as nanoscale ultra-thin body FETs (UTB-FETs) and FinFETs. A novel way of introducing strain in ultra-thin body and buried-oxide SOI structures by implantation of Ge ions followed by crystallization to form localized SiGe regions underneath the buried oxide (BOX) was demonstrated. The under-the-BOX SiGe technique was integrated in n-channel UTB-FETs. A novel Ge2Sb2Te5 (GST) liner stressor for enhancing the drive current in p-channel FinFETs (p-FinFETs) was explored. A GST liner stressor wrapping a p-FinFET can be shrunk or contracted to generate very high channel stress for drive current enhancement. Another novel ZnS-SiO2 liner stressor which can be expanded and exerts high tensile stress was reported to enhance drive current in Si n-channel FinFETs. This thesis work provides options of strain engineering for enhancing the performance of advanced transistors at the 20-nm technology node and beyond.
URI: http://scholarbank.nus.edu.sg/handle/10635/51978
Appears in Collections:Ph.D Theses (Open)

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