Please use this identifier to cite or link to this item:
|Title:||Performance evaluation of a newly developed electrolytic system for stable thinning of silicon wafers|
|Authors:||Islam, M.M. |
Senthil Kumar, A.
|Keywords:||IE assisted ELID|
Self sharpening ability
Single crystal silicon wafers
|Citation:||Islam, M.M., Senthil Kumar, A., Balakumar, S., Lim, H.S., Rahman, M. (2006-05-10). Performance evaluation of a newly developed electrolytic system for stable thinning of silicon wafers. Thin Solid Films 504 (1-2) : 15-19. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2005.09.023|
|Abstract:||The Electrolytic In-process Dressing (ELID) grinding process has led to significantly better achievements compared to other attempts in maintaining sharp grits throughout the process during efficient machining of silicon wafers. This process, however, shows nonlinear electrolytic dressing and hence unstable forces during thinning. A new electrolytic system, Injection Electrode (IE) assisted electrolysis, has been tried here for this purpose to thin down silicon wafers with generation of required surface qualities. IE assisted electrolysis at lower injection flow rate exhibited good condition of the grinding wheel. This led to the successful thinning of silicon wafers down to 70 μm thickness from 750 μm with superior surface qualities. © 2005 Elsevier B.V. All rights reserved.|
|Source Title:||Thin Solid Films|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jan 12, 2019
WEB OF SCIENCETM
checked on Jan 2, 2019
checked on Dec 29, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.