Please use this identifier to cite or link to this item:
|Title:||Ab initio simulations of low-k and ultra low-k dielectric interconnects|
|Authors:||Tan, V.B.C. |
|Keywords:||Ab initio molecular dynamics|
|Citation:||Tan, V.B.C.,Dai, L.,Yang, S.W.,Chen, X.T.,Wu, P. (2007). Ab initio simulations of low-k and ultra low-k dielectric interconnects. Diffusion and Defect Data Pt.B: Solid State Phenomena 121-123 (PART 2) : 1061-1064. ScholarBank@NUS Repository.|
|Abstract:||Ab initio molecular dynamics simulations were carried out to study low-k/ultra low-k dielectric systems comprising Cu/Ta/SiLK-like polymer. A study of the motion of single metal atoms of Cu and Ta in the SiLK-like polymer showed that Cu atom motions are effected by jumps between cavities inside the polymer and that Ta is more sluggish than Cu not only because of its larger mass but also because of stronger affinity to the polymer. It was also found that crosslinking of the polymer did not affect the motion of the metal atoms. Simulations of deposition showed that a thin Ta diffusion barrier does not have good structural integrity to prevent Cu-diffusion when directly deposited onto the SiLK; the barrier performance was greatly improved after introducing a Si-based film between the Ta and SiLK.|
|Source Title:||Diffusion and Defect Data Pt.B: Solid State Phenomena|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Oct 13, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.