Please use this identifier to cite or link to this item:
|Title:||Geometry dependent I-V characteristics of silicon nanowires|
|Source:||Ng, M.-F., Shen, L., Zhou, L., Yang, S.-W., Tan, V.B.C. (2008-11). Geometry dependent I-V characteristics of silicon nanowires. Nano Letters 8 (11) : 3662-3667. ScholarBank@NUS Repository. https://doi.org/10.1021/nl801668p|
|Abstract:||The current-voltage (I-V) characteristics of small-diameter hydrogenated and pristine silicon nanowires (SiNWs) are calculated by nonequilibrium Green's function combined with density functional theory. We show that the I-V characteristics depend strongly on length, growth orientation, and surface modification of the SiNWs. In particular, a length of 3 nm is suggested for the nanowires to retrieve its intrinsic conducting properties from the influences of both the electrodes and metal/semiconductor mismatched surface contact; surface reconstruction would enhance the conductance in hydrogenated SiNW, which is explained by the extra conducting eigenchannel found in the transmission spectrum, suggesting possible surface conducting channel. Discussions with available experimental data are given. © 2008 American Chemical Society.|
|Source Title:||Nano Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Dec 13, 2017
WEB OF SCIENCETM
checked on Nov 16, 2017
checked on Dec 16, 2017
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.