Please use this identifier to cite or link to this item:
|Title:||Forbidden pitch improvement using modified illumination in lithography|
|Citation:||Ling, M.L., Tay, C.J., Quan, C., Chua, G.S., Lin, Q. (2009). Forbidden pitch improvement using modified illumination in lithography. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 27 (1) : 85-91. ScholarBank@NUS Repository. https://doi.org/10.1116/1.3054286|
|Abstract:||In lithography, forbidden pitch refers to pitch that suffers degradation in the process window due to the application of off-axis illumination (OAI). Destructive light field interference of diffracted light from a mask at forbidden pitch causes reduction in image contrast and depth of focus (DOF) and limits the pitch range to be patterned. In this paper, a modification to conventional OAI shape is proposed to minimize the effect of forbidden pitch. The modification is based on the interaction of illumination source with pattern density. The modified source employs double annular illumination. Simulation is carried out to investigate the effect of the modified source for one dimensional line and space pattern with a pitch varying from 130 to 500 nm. Results shows that the maximum critical dimension fluctuation is around 3% compared to 13% in conventional annular illumination. Furthermore, the degradation in DOF is within 21% of DOF compared to 49% in conventional annular illumination. © 2009 American Vacuum Society.|
|Source Title:||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Oct 16, 2018
WEB OF SCIENCETM
checked on Oct 8, 2018
checked on Aug 31, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.