Please use this identifier to cite or link to this item:
https://scholarbank.nus.edu.sg/handle/10635/51275
| Title: | X-ray photoelectron spectroscopic study of InGaAsN grown by MOCVD | Authors: | Chang, W. Lin, J. Zhou, W. Chua, S.J. Liu, Y.J. Wee, A.T.S. |
Issue Date: | 2001 | Citation: | Chang, W.,Lin, J.,Zhou, W.,Chua, S.J.,Liu, Y.J.,Wee, A.T.S. (2001). X-ray photoelectron spectroscopic study of InGaAsN grown by MOCVD. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS 2 : 624-625. ScholarBank@NUS Repository. | Abstract: | The growth of InGaAsN films using metallorganic chemical vapor deposition (MOCVD) was analyzed using X-ray photoelectron spectroscopy (XPS). XPS was used to study the dependence of chemical states of the constitutional elements on growth conditions and post-annealing. The results show that the addition of N atoms increases the atomic ratio of both Ga:As and In:Ga which produces InN+GaAs configuration in InGaAsN quaternary alloy. | Source Title: | Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS | URI: | http://scholarbank.nus.edu.sg/handle/10635/51275 | ISSN: | 10928081 |
| Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
Google ScholarTM
Check
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.