Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/51275
Title: X-ray photoelectron spectroscopic study of InGaAsN grown by MOCVD
Authors: Chang, W.
Lin, J. 
Zhou, W.
Chua, S.J. 
Liu, Y.J. 
Wee, A.T.S. 
Issue Date: 2001
Source: Chang, W.,Lin, J.,Zhou, W.,Chua, S.J.,Liu, Y.J.,Wee, A.T.S. (2001). X-ray photoelectron spectroscopic study of InGaAsN grown by MOCVD. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS 2 : 624-625. ScholarBank@NUS Repository.
Abstract: The growth of InGaAsN films using metallorganic chemical vapor deposition (MOCVD) was analyzed using X-ray photoelectron spectroscopy (XPS). XPS was used to study the dependence of chemical states of the constitutional elements on growth conditions and post-annealing. The results show that the addition of N atoms increases the atomic ratio of both Ga:As and In:Ga which produces InN+GaAs configuration in InGaAsN quaternary alloy.
Source Title: Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
URI: http://scholarbank.nus.edu.sg/handle/10635/51275
ISSN: 10928081
Appears in Collections:Staff Publications

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