Please use this identifier to cite or link to this item: https://doi.org/10.1117/12.756401
Title: Demonstration and control of the fast-absorption recovery times of the InGaN/GaN quantum well saturable absorbers
Authors: Lin, F. 
Xiang, N. 
Chen, P.
Chua, S.J. 
Irshad, A.
Roither, S.
Pugzlys, A.
Baltuska, A.
Keywords: Absorption
InGaN/GaN quantum well
Metal organic chemical vapor deposition
Recovery time
Saturable absorber
Issue Date: 2008
Source: Lin, F., Xiang, N., Chen, P., Chua, S.J., Irshad, A., Roither, S., Pugzlys, A., Baltuska, A. (2008). Demonstration and control of the fast-absorption recovery times of the InGaN/GaN quantum well saturable absorbers. Proceedings of SPIE - The International Society for Optical Engineering 6824 : -. ScholarBank@NUS Repository. https://doi.org/10.1117/12.756401
Abstract: InGaN/GaN multiple quantum well samples were grown by metal organic chemical vapor deposition with thinner low-temperature GaN buffers than that in the conventional structure. It was found that the absorption recovery times of the InGaN/GaN quantum wells can be controlled by varying the thickness of the low-temperature GaN buffers. Transmission electron microscopy results showed that increased dislocations were introduced in the quantum well region with decreased low-temperature GaN buffer thickness. The degraded crystalline quality of the absorbing regions caused an increased density of nonradiative recombination centers, which were responsible for the fast recovery of the absorption.
Source Title: Proceedings of SPIE - The International Society for Optical Engineering
URI: http://scholarbank.nus.edu.sg/handle/10635/51135
ISBN: 9780819469991
ISSN: 0277786X
DOI: 10.1117/12.756401
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