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|Title:||Demonstration and control of the fast-absorption recovery times of the InGaN/GaN quantum well saturable absorbers|
|Authors:||Lin, F. |
InGaN/GaN quantum well
Metal organic chemical vapor deposition
|Citation:||Lin, F., Xiang, N., Chen, P., Chua, S.J., Irshad, A., Roither, S., Pugzlys, A., Baltuska, A. (2008). Demonstration and control of the fast-absorption recovery times of the InGaN/GaN quantum well saturable absorbers. Proceedings of SPIE - The International Society for Optical Engineering 6824 : -. ScholarBank@NUS Repository. https://doi.org/10.1117/12.756401|
|Abstract:||InGaN/GaN multiple quantum well samples were grown by metal organic chemical vapor deposition with thinner low-temperature GaN buffers than that in the conventional structure. It was found that the absorption recovery times of the InGaN/GaN quantum wells can be controlled by varying the thickness of the low-temperature GaN buffers. Transmission electron microscopy results showed that increased dislocations were introduced in the quantum well region with decreased low-temperature GaN buffer thickness. The degraded crystalline quality of the absorbing regions caused an increased density of nonradiative recombination centers, which were responsible for the fast recovery of the absorption.|
|Source Title:||Proceedings of SPIE - The International Society for Optical Engineering|
|Appears in Collections:||Staff Publications|
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