Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/51070
Title: WORM-type device with rectifying effect based on a conjugated copolymer of fluorene and europium complex
Authors: Tan, Y.P.
Song, Y.
Teo, E.Y.H. 
Ling, Q.D. 
Lim, S.L.
Lo, P.G.Q.
Chan, D.S.H. 
Kang, E.T. 
Zhu, C. 
Issue Date: 2008
Citation: Tan, Y.P., Song, Y., Teo, E.Y.H., Ling, Q.D., Lim, S.L., Lo, P.G.Q., Chan, D.S.H., Kang, E.T., Zhu, C. (2008). WORM-type device with rectifying effect based on a conjugated copolymer of fluorene and europium complex. Journal of the Electrochemical Society 155 (1) : H17-H20. ScholarBank@NUS Repository.
Abstract: We report a nonvolatile, write-once-read-many-times (WORM) memory device based on a simple organic-inorganic heterojunction. The organic-based hybrid used is 9,9-dihexylfluorene and Eu-complexed benzoate, which contains both electron-donor (9, 9″ -dihexylfluorene) and electron-acceptor (europium complex) groups. Under current-voltage testing, the device is able to switch from one initial nonconducting state to a conducting state once a threshold voltage is reached. Diode rectifying characteristics, with a current ratio of four orders of magnitude, is also observed after the device is turned on, which is essential to address one memory cell in large passive matrix circuits. © 2007 The Electrochemical Society.
Source Title: Journal of the Electrochemical Society
URI: http://scholarbank.nus.edu.sg/handle/10635/51070
ISSN: 00134651
Appears in Collections:Staff Publications

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