Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3063078
Title: Spin polarized transport in an asymmetric ferromagnetic/quantum dot/ferromagnetic system
Authors: Ma, M.J. 
Jalil, M.B.A. 
Tan, S.G. 
Issue Date: 2009
Source: Ma, M.J., Jalil, M.B.A., Tan, S.G. (2009). Spin polarized transport in an asymmetric ferromagnetic/quantum dot/ferromagnetic system. Journal of Applied Physics 105 (7) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3063078
Abstract: We investigate the tunnel magnetoresistance (TMR) of the double barrier magnetic tunnel junction, where a quantum dot (QD) with discrete electron and hole energy levels is sandwiched between ferromagnetic leads. The effects of the symmetry of the coupling between the leads and the dot on both the TMR and spin accumulation (SA) are studied for voltage ranges corresponding to the QD's single and double occupancies. When the QD is singly occupied, both the TMR and SA assume at their minimum values for symmetrical junctions with identical coupling strengths. For the doubly occupied QD, the opposite occurs with the highest TMR and SA being observed for symmetrical junctions with identical coupling strengths. The TMR is found to be strongly correlated with the spin accumulation in the QD. © 2009 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/51042
ISSN: 00218979
DOI: 10.1063/1.3063078
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