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|Title:||Selective epitaxial germanium on silicon-on-insulator high speed photodetectors using low-temperature ultrathin Si0.8 Ge0.2 buffer|
|Citation:||Loh, T.H., Nguyen, H.S., Murthy, R., Yu, M.B., Loh, W.Y., Lo, G.Q., Balasubramanian, N., Kwong, D.L., Wang, J., Lee, S.J. (2007). Selective epitaxial germanium on silicon-on-insulator high speed photodetectors using low-temperature ultrathin Si0.8 Ge0.2 buffer. Applied Physics Letters 91 (7) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2769750|
|Abstract:||The authors report the performance of selective epitaxial Ge (400 nm) on Si-on-insulator p-i-n mesa-type normal incidence photodiodes using ∼14 nm low-temperature Si0.8 Ge0.2 buffer without cyclic annealing. At -1 V, very low bulk dark current densities of 1.5-2 mA cm2 were obtained indicating good material quality, and the peripheral surface leakage current densities were 14-19.5 μAcm. For 28 μm diameter round photodiode, the highest achieved external quantum efficiencies at -5 V were 27%, 9%, and 2.9% for 850 nm, 1.3 μm, and 1.56 μm optical wavelengths, respectively. 15×15 μ m2 square photodiode has 3 dB bandwidth 15 GHz at -1 V. Good performance was achieved without high-temperature annealing, suggesting easy integration of GeSi photodiode unto existing complementary metal-oxide-semiconductor process. © 2007 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
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