Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2769750
Title: Selective epitaxial germanium on silicon-on-insulator high speed photodetectors using low-temperature ultrathin Si0.8 Ge0.2 buffer
Authors: Loh, T.H.
Nguyen, H.S.
Murthy, R.
Yu, M.B.
Loh, W.Y.
Lo, G.Q.
Balasubramanian, N.
Kwong, D.L.
Wang, J. 
Lee, S.J. 
Issue Date: 2007
Source: Loh, T.H., Nguyen, H.S., Murthy, R., Yu, M.B., Loh, W.Y., Lo, G.Q., Balasubramanian, N., Kwong, D.L., Wang, J., Lee, S.J. (2007). Selective epitaxial germanium on silicon-on-insulator high speed photodetectors using low-temperature ultrathin Si0.8 Ge0.2 buffer. Applied Physics Letters 91 (7) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2769750
Abstract: The authors report the performance of selective epitaxial Ge (400 nm) on Si-on-insulator p-i-n mesa-type normal incidence photodiodes using ∼14 nm low-temperature Si0.8 Ge0.2 buffer without cyclic annealing. At -1 V, very low bulk dark current densities of 1.5-2 mA cm2 were obtained indicating good material quality, and the peripheral surface leakage current densities were 14-19.5 μAcm. For 28 μm diameter round photodiode, the highest achieved external quantum efficiencies at -5 V were 27%, 9%, and 2.9% for 850 nm, 1.3 μm, and 1.56 μm optical wavelengths, respectively. 15×15 μ m2 square photodiode has 3 dB bandwidth 15 GHz at -1 V. Good performance was achieved without high-temperature annealing, suggesting easy integration of GeSi photodiode unto existing complementary metal-oxide-semiconductor process. © 2007 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/51033
ISSN: 00036951
DOI: 10.1063/1.2769750
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

45
checked on Dec 5, 2017

WEB OF SCIENCETM
Citations

33
checked on Nov 16, 2017

Page view(s)

37
checked on Dec 10, 2017

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.